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? semiconductor components industries, llc, 2013 july, 2013 ? rev. 12 1 publication order number: mjd31/d mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves ? straight lead version in plastic sleeves (?1? suffix) ? lead formed version in 16 mm tape and reel (?t4? suffix) ? electrically similar to popular tip31 and tip32 series ? epoxy meets ul 94, v ? 0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant silicon power transistors 3 amperes 40 and 100 volts 15 watts see detailed ordering and shipping information in the package dimensions sect ion on page 9 of this data sheet. ordering information ipak case 369d style 1 dpak case 369c style 1 marking diagrams a = site code y = year ww = work week xx = 1, 1c, 2, or 2c g = pb ? free package ayww j3xxg yww j3xxg http://onsemi.com dpak ipak 4 1 2 3 4 1 2 3 1 base 3 emitter collector 2,4 1 base 3 emitter collector 2,4 complementary
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 2 maximum ratings rating symbol max unit collector ? emitter voltage mjd31, njvmjd31t4g, mjd32, njvmjd32t4g mjd31c, njvmjd31ct4g, mjd32c, njvmjd32cg, NJVMJD32CT4G v ceo 40 100 vdc collector ? base voltage mjd31, njvmjd31t4g, mjd32, njvmjd32t4g mjd31c, njvmjd31ct4g, mjd32c, njvmjd32cg, NJVMJD32CT4G v cb 40 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous i c 3.0 adc collector current ? peak i cm 5.0 adc base current i b 1.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 1.56 0.012 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 8.3 c/w thermal resistance, junction ? to ? ambient* r ja 80 c/w lead temperature for soldering purposes t l 260 c *these ratings are applicable when surface mounted on the minimum pad sizes recommended.
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) mjd31, njvmjd31t4g, mjd32, njvmjd32t4g mjd31c, njvmjd31ct4g, mjd32c, njvmjd32cg, NJVMJD32CT4G v ceo(sus) 40 100 ? ? vdc collector cutoff current (v ce = 40 vdc, i b = 0) mjd31, njvmjd31t4g, mjd32 , njvmjd32t4g (v ce = 60 vdc, i b = 0) mjd31c, njvmjd31ct4g, mjd32c, njvmjd32cg, NJVMJD32CT4G i ceo ? ? 50 50 adc collector cutoff current (v ce = rated v ceo , v eb = 0) ices ? 20 adc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 1 madc on characteristics (note 1) dc current gain (i c = 1 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) h fe 25 10 ? 50 collector ? emitter saturation voltage (i c = 3 adc, i b = 375 madc) v ce(sat) ? 1.2 vdc base ? emitter on voltage (i c = 3 adc, v ce = 4 vdc) v be(on) ? 1.8 vdc dynamic characteristics current gain ? bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) f t 3 ? mhz small ? signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) h fe 20 ? 1. pulse test: pulse width 300 s, duty cycle 2%. 2. f t = ? h fe ?? f test .
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 4 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) figure 2. switching time test circuit 3 0.03 i c , collector current (amps) 0.03 0.05 0.07 0.1 0.2 0.5 0.7 i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t, time (s) 0.3 2 1 0.7 0.5 0.3 t s 0.2 0.1 0.07 0.05 12 figure 3. turn ? on time 2 i c , collector current (amps) 0.02 i c /i b = 10 t j = 25 c t, time (s) 1 0.7 0.5 0.3 0.1 0.07 0.05 0.03 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. 0.03 0.07 0.3 3 0.1 0.7 0.05 0.5 1 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t f @ v cc = 30 v t f @ v cc = 10 v 2.5 0 2 1.5 1 0.5 t a t c figure 4. turn ? off time t a (surface mount) t c typical characteristics t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal resistance (normalized) r jc(t) = r(t) r jc r jc = 8.33 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse 0.01 0.7 d = 0.5 figure 5. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 0.1 0.05 0.01
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 5 typical characteristics ? mjd31, mjd31c (npn) 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 6. dc current gain at v ce = 4 v h fe , dc current gain v ce = 4 v 25 c 150 c ? 55 c 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 7. dc current gain at v ce = 2 v h fe , dc current gain v ce = 2 v 25 c 150 c ? 55 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.001 0.01 0.1 1 10 i c , collector current (a) figure 8. collector ? emitter saturation voltage v ce(sat) , coll ? emitt saturation voltage (v) i c /i b = 10 25 c 150 c ? 55 c v be(sat) , base ? emitt saturation voltage (v) i c , collector current (a) figure 9. base ? emitter saturation voltage 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 v ce = 5 v v be(on) , base ? emitter on voltage (v) i c , collector current (a) figure 10. base-emitter ?on? voltage ? 55 c 25 c 150 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 i c /i b = 10 ? 55 c 25 c 150 c 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 1000 i b , base current (ma) figure 11. collector saturation region v ce , collector ? emitter voltage (v) 10 ma 100 ma 500 ma 1 a i c = 3 a t a = 25 c
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 6 typical characteristics ? mjd31, mjd31c (npn) 1 10 100 1000 0.1 1 10 100 v r , reverse voltage (v) figure 12. capacitance c, capacitance (pf) c ib c ob t a = 25 c 1 10 100 0.001 0.01 0.1 1 10 v ce = 5 v t a = 25 c i c , collector current (a) figure 13. current ? gain ? bandwidth product f t , current ? gain ? bandwidth product (mhz) 0.01 0.1 1 10 1 10 100 v ce , collector ? emitter voltage (v) figure 14. safe operating area i c , collector current (a)
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 7 typical characteristics ? mjd32, mjd32c (pnp) 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 15. dc current gain at v ce = 4 v h fe , dc current gain v ce = 4 v 25 c 150 c ? 55 c 1 10 100 1000 0.01 0.1 1 10 i c , collector current (a) figure 16. dc current gain at v ce = 2 v h fe , dc current gain 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 0.01 0.1 1 10 v ce = 2 v 25 c 150 c ? 55 c 25 c 150 c ? 55 c i c , collector current (a) figure 17. collector ? emitter saturation voltage v ce(sat) , coll ? emitt saturation voltage (v) i c /i b = 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 0.1 1 10 25 c 150 c ? 55 c i c , collector current (a) figure 18. base ? emitter saturation voltage v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0.01 0.1 1 10 v ce = 5 v 25 c 150 c ? 55 c i c , collector current (a) figure 19. base ? emitter ?on? voltage v be(on) , base ? emitter on voltage (v) 0 0.4 0.8 1.2 1.6 2 0.01 0.1 1 10 100 1000 i b , base current (ma) figure 20. collector saturation region v ce , collector ? emitter voltage (v) 10 ma 100 ma 500 ma 1 a i c = 3 a t a = 25 c
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 8 typical characteristics 1 10 100 1000 0.1 1 10 100 v r , reverse voltage (v) figure 21. capacitance c, capacitance (pf) c ib c ob t a = 25 c 1 10 100 0.001 0.01 0.1 1 10 i c , collector current (a) figure 22. current ? gain ? bandwidth product f t , current ? gain ? bandwidth product (mhz) v ce = 5 v t a = 25 c 0.01 0.1 1 10 1 10 100 v ce , collector ? emitter voltage (v) figure 23. safe operating area i c , collector current (a) 1 ms 1 s
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 9 ordering information device package type package shipping ? mjd31cg dpak (pb ? free) 369c 75 units / rail mjd31c1g ipak (pb ? free) 369d 75 units / rail mjd31crlg dpak (pb ? free) 369c 1,800 / tape & reel mjd31ct4g dpak (pb ? free) 369c 2,500 / tape & reel njvmjd31ct4g dpak (pb ? free) 369c 2,500 / tape & reel mjd31t4g dpak (pb ? free) 369c 2,500 / tape & reel njvmjd31t4g dpak (pb ? free) 369c 2,500 / tape & reel mjd32cg dpak (pb ? free) 369c 75 units / rail njvmjd32cg dpak (pb ? free) 369c 75 units / rail mjd32crlg dpak (pb ? free) 369c 1,800 / tape & reel mjd32ct4g dpak (pb ? free) 369c 2,500 / tape & reel NJVMJD32CT4G dpak (pb ? free) 369c 2,500 / tape & reel mjd32rlg dpak (pb ? free) 369c 1,800 / tape & reel mjd32t4g dpak (pb ? free) 369c 2,500 / tape & reel njvmjd32t4g dpak (pb ? free) 369c 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 10 package dimensions dpak case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd31, njvmjd31t4g, mjd31c, njvmjd31ct4g (npn), mjd32, njvmjd32t4g, mjd32c, njvmjd32cg, NJVMJD32CT4G (pnp) http://onsemi.com 11 package dimensions style 1: pin 1. base 2. collector 3. emitter 4. collector 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mjd31/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative

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